Formation of the ErSi2 phase and the associated fractal pattern on the Si surface upon high current Er-ion implantation

• Published in: Journal of alloys and compounds Vol. 336; no. 1-2; pp. 253 - 258
• Main Authors: Cheng, X.Q, Liu, B.X
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 18.04.2002; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities: doping, implantation, distribution, concentration, etc; Er-ion implantation; ErSi2 phase; Exact sciences and technology; Fractal patterns; Inorganic compounds; Physics; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Er-ion implantation; Fractal patterns; ErSi2 phase; Si; Erbium Silicides; Ion implantation; Inorganic compounds; Fluence; Surface current; Binary compounds; Fractals; XRD; Erbium ions; Rare earth compounds; Heat treatments; Ion beams; Wafers; Ion sources; Formates; Vacuum arcs; Crystal structure
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/S0925-8388(01)01874-6

Using a metal vapor vacuum arc ion source, plain and continuous ErSi2 layers of good crystalline structure were formed on Si surfaces by high current Er-ion implantation. Interestingly, under some specific conditions, the formed ErSi2 grains organized themselves in a fractal pattern featuring self-similarity. The mechanism of the ErSi2 formation as well as the growth of the fractal pattern was discussed in terms of the dynamic launching of energetic Er ions into Si, beam heating effect, and the effect of ion fluence during the high current Er-ion implantation of far-from-equilibrium.