Computer simulation of excess carrier distribution for the phase shift microwave detected photoconductivity technique

A computer simulation of excess carrier distribution in the phase shift mode of the microwave detected photoconductivity method is carried out. For the solution of three-dimensional diffusion equation with corresponding boundary conditions, a finite-difference method using adaptive grids is applied....

Full description

Saved in:
Bibliographic Details
Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 91; pp. 253 - 255
Main Authors Sirotkin, V.V., Yakimov, E.B.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 30.04.2002
Elsevier
Subjects
Electrical measurements
Microwave photoconductivity
Semiconductors
Silicon
Electrical measurements
Silicon
Semiconductors
Microwave photoconductivity
Online AccessGet full text

Cover

More Information
Summary:A computer simulation of excess carrier distribution in the phase shift mode of the microwave detected photoconductivity method is carried out. For the solution of three-dimensional diffusion equation with corresponding boundary conditions, a finite-difference method using adaptive grids is applied. The most probable concentration determining the phase shift is obtained for a few different minority carrier lifetimes and light beam diameters. It is shown that the most probable excess carrier concentration is determined mainly by the total generation rate and is practically independent of lifetime.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(01)01022-4