Electronic transport properties of two-dimensional tetragonal zinc chalcogenides

The electronic transport properties of two-dimensional (2D) tetragonal ZnX (X = S, Se) monolayers have been studied using density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. The gate voltage (a 5 V in particular) generally enhances the transport performance of t...

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Published inPhysical chemistry chemical physics : PCCP Vol. 25; no. 2; pp. 14635 - 14641
Main Authors Zhu, Yaoyun, Meng, Shuang, Zhou, Jia
Format Journal Article
LanguageEnglish
Published England Royal Society of Chemistry 24.05.2023
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Summary:The electronic transport properties of two-dimensional (2D) tetragonal ZnX (X = S, Se) monolayers have been studied using density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. The gate voltage (a 5 V in particular) generally enhances the transport performance of the monolayers, which is ca. three times that without the gate voltage. It is shown that the transport properties of the Janus Zn 2 SeS monolayer may show a relatively good trend among the ZnX monolayers, and the Zn 2 SeS monolayer has the highest sensitivity to gate-voltage regulation. We also investigate the photocurrent of ZnX monolayers under linearly polarized light irradiation in the visible and near-ultraviolet regions, and the ZnS monolayer processes a maximum value of 15 a 0 2 per photon in the near-ultraviolet region. The excellent electronic transport properties make environmentally friendly tetragonal ZnX monolayers promising for utilization in various electronic and optoelectronic devices. The electronic transport properties of two-dimensional (2D) tetragonal ZnX (X = S, Se) monolayers have been studied using density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods.
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ISSN:1463-9076
1463-9084
DOI:10.1039/d3cp00864a