Electronic transport properties of two-dimensional tetragonal zinc chalcogenides
The electronic transport properties of two-dimensional (2D) tetragonal ZnX (X = S, Se) monolayers have been studied using density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. The gate voltage (a 5 V in particular) generally enhances the transport performance of t...
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Published in | Physical chemistry chemical physics : PCCP Vol. 25; no. 2; pp. 14635 - 14641 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
England
Royal Society of Chemistry
24.05.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The electronic transport properties of two-dimensional (2D) tetragonal ZnX (X = S, Se) monolayers have been studied using density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. The gate voltage (a 5 V in particular) generally enhances the transport performance of the monolayers, which is
ca.
three times that without the gate voltage. It is shown that the transport properties of the Janus Zn
2
SeS monolayer may show a relatively good trend among the ZnX monolayers, and the Zn
2
SeS monolayer has the highest sensitivity to gate-voltage regulation. We also investigate the photocurrent of ZnX monolayers under linearly polarized light irradiation in the visible and near-ultraviolet regions, and the ZnS monolayer processes a maximum value of 15
a
0
2
per photon in the near-ultraviolet region. The excellent electronic transport properties make environmentally friendly tetragonal ZnX monolayers promising for utilization in various electronic and optoelectronic devices.
The electronic transport properties of two-dimensional (2D) tetragonal ZnX (X = S, Se) monolayers have been studied using density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/d3cp00864a |