Observation of a pseudogap in α-AlMnSi by break-junction tunneling spectroscopy

• Published in: Journal of non-crystalline solids Vol. 312; pp. 513 - 516
• Main Authors: Okada, J.Tamura, Ekino, T., Takasaki, T., Yokoyama, Y., Watanabe, Y., Fujii, H., Nanao, S.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2002; Elsevier
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron density of states and band structure of crystalline solids; Electron states; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Metals. Metallurgy; Physics; Rare earth metals and alloys; Tunneling; E250; Q110; 71.23.Ft; 72.80.Ng; Monocrystals; Silicon alloys; Alpha phase; Pseudogap; Aluminium alloys; Tunnel effect; Manganese alloys; Ternary alloys; Electronic density of states; Experimental study; IV characteristic
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/S0022-3093(02)01734-9

Tunneling spectroscopy studies of an α-Al 9Mn 1.8Si 2 single crystal were made at 4.2 K with the break-junction technique. A narrow dip at zero bias ( V=0) with peaks on both sides was observed in the spectrum, which corresponds to a pseudogap of 25 meV in the density of states. The dense set of sharp spikes predicted by the band calculations for the crystal was not observed.