Electrical properties of columnar Sb-doped MgZnO film grown by metalorganic chemical vapor deposition

• Published in: Journal of alloys and compounds Vol. 757; pp. 98 - 104
• Main Authors: Kim, Byeong-Hyeok, Kim, Min-Woo, Kang, Jang-Won, Choi, Yong-Seok, Kim, Bong-Joong, Park, Seong-Ju
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 15.08.2018; Elsevier BV
• Subjects: Antimony; Carrier density; Chemical vapor deposition; Electric properties; Electrical properties; Electrical resistivity; Electronic properties; Grain boundaries; Grain boundary; Hall effect; Magnesium; Metalorganic chemical vapor deposition; Organic chemistry; Oxide materials; Semiconductor; Thin films; Zinc oxides; Thin films; Semiconductor; Electronic properties; Oxide materials; Grain boundary
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2018.05.023

We report on the electrical properties of columnar Sb-doped MgZnO (MgZnO:Sb) films grown by metalorganic chemical vapor deposition (MOCVD). Hall effect and C–V measurements showed different carrier types and concentrations in the columnar MgZnO:Sb film. The Hall effect measurements showed both n-type and p-type conductivity randomly across repeated measurements. In contrast, the C–V measurements showed only p-type conductivity across repeated measurements, and the hole concentration was estimated to be 1.46 × 1019 cm−3. We show that carrier type and concentration in columnar MgZnO:Sb films should be measured vertically rather than laterally due to the large defect scattering at the grain boundaries of the columnar structures. •We measured on the electrical properties of columnar MgZnO:Sb films grown by MOCVD.•The Hall effect measurements randomly showed both n and p-type conductivity.•The C–V measurements showed only p-type conductivity across repeated measurements.•The C–V measurements showed the hole concentration was 1.46 × 1019 cm−3.