Improved nucleation and a planar interface in LPE grown Pb1−xSnxTe heterostructures
A planar interface was obtained in LPE grown Pb1−xSnxTe heterostructures using nominally oriented substrates by inducing a vertical thermal gradient normal to the substrate-solution interface at the moment of contact. It was found that this vertical gradient promoted very dense nucleation in heteroe...
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Published in | Journal of crystal growth Vol. 47; no. 3; pp. 463 - 466 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.09.1979
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Online Access | Get full text |
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