Improved nucleation and a planar interface in LPE grown Pb1−xSnxTe heterostructures

A planar interface was obtained in LPE grown Pb1−xSnxTe heterostructures using nominally oriented substrates by inducing a vertical thermal gradient normal to the substrate-solution interface at the moment of contact. It was found that this vertical gradient promoted very dense nucleation in heteroe...

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Bibliographic Details
Published inJournal of crystal growth Vol. 47; no. 3; pp. 463 - 466
Main Authors Tamari, N., Shtrikman, H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.09.1979
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