Improved nucleation and a planar interface in LPE grown Pb1−xSnxTe heterostructures

A planar interface was obtained in LPE grown Pb1−xSnxTe heterostructures using nominally oriented substrates by inducing a vertical thermal gradient normal to the substrate-solution interface at the moment of contact. It was found that this vertical gradient promoted very dense nucleation in heteroe...

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Bibliographic Details
Published inJournal of crystal growth Vol. 47; no. 3; pp. 463 - 466
Main Authors Tamari, N., Shtrikman, H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.09.1979
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Summary:A planar interface was obtained in LPE grown Pb1−xSnxTe heterostructures using nominally oriented substrates by inducing a vertical thermal gradient normal to the substrate-solution interface at the moment of contact. It was found that this vertical gradient promoted very dense nucleation in heteroepitaxial growth, resulting in the formation of a continuous layer after less than 1 sec, and a planar interface. Other growth conditions using substrates which were not accurately oriented to the (100) plane produced sparse nucleation and partial dissolution of the substrate or the previously grown layer, leading to a rough, uneven interface.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(79)90215-X