Crystallization kinetics of Sn doped Ge20Te80−xSnx (0 ≤ x ≤ 4) chalcogenide glassy alloys

• Published in: Journal of alloys and compounds Vol. 721; pp. 674 - 682
• Main Authors: Fernandes, Brian Jeevan, Naresh, N., Ramesh, K., Sridharan, Kishore, Udayashankar, N.K.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 15.10.2017; Elsevier BV
• Subjects: Activation energy; Alloy systems; Correlation analysis; Crystallization; Differential scanning calorimetry; Germanium base alloys; Glass forming ability; Heat measurement; Heating rate; Mathematical models; Mechanical properties; Multifunctional materials; Optical properties; Phase change materials; Semiconductors; Studies; Switching; Thermal stability; Thermodynamic properties; Differential scanning calorimetry; Activation energy; Thermal stability; Crystallization; Glass forming ability
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2017.06.070

Chalcogenide semiconductors have evolved as multifunctional materials due to their fascinating thermal, optical, electrical and mechanical properties. In this report, Ge20Te80−xSnx (0 ≤ x ≤ 4) glassy alloys are systematically studied in order to understand the effect of variation of Sn content on the thermal parameters such as glass transition (Tg), onset crystallization (Tc), peak crystallization (Tp), melting temperature (Tm), activation energy of glass transition (Eg), and crystallization (Ec). The values of Eg are calculated from the variation of Tg with the heating rate (α), according to Kissinger and Moynihan model, while the values of Ec are calculated from the variation of Tp with the heating rate (α), according to Kissinger, Takhor, Augis-Bennett and Ozawa model. Thermal stability and glass forming ability (GFA) are discussed for understanding the applicability of the synthesized materials in phase change memory (PCM) applications. Thermal parameters are correlated with the electrical switching studies to get an insight into the phase change mechanism. The results of the calculated thermal parameters reveal that the GFA of the synthesized Ge20Te80−xSnx (0 ≤ x ≤ 4) glassy alloys has a synchronous relationship with their thermal properties studied through differential scanning calorimetry, indicating their potential for phase-change memory device applications. •Ge20Te80−xSnx (0 ≤ x ≤ 4) glasses are synthesized through melt quenching technique.•DSC thermograms obtained under non-isothermal conditions are analyzed and discussed.•Various thermal parameters are calculated based on the variation of Sn content.•Thermal stability and glass forming ability decrease with increase in Sn content.•Easy devitrifiability of the glasses is useful for phase-change memory applications.