The hidden structure in liquid IIIB–VB alloys
The electrical resistivity, ρ, of liquid Ga–Sb and In–Sb alloys was measured by the dc four probe technique. The value of ρ remains metallic in character and the simple parabolic shape of the Nordheim rule is observed, in spite of the existence of intermetallic compounds with semiconductor propertie...
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Published in | Journal of non-crystalline solids Vol. 312; pp. 222 - 226 |
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Main Authors | , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.10.2002
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | The electrical resistivity,
ρ, of liquid Ga–Sb and In–Sb alloys was measured by the dc four probe technique. The value of
ρ remains metallic in character and the simple parabolic shape of the Nordheim rule is observed, in spite of the existence of intermetallic compounds with semiconductor properties at the 1:1 composition. However, the concentration dependence of the temperature dependence of
ρ, d
ρ/d
T, for these systems shows a minimum respectively at the eutectic compositions, which are present in the Sb-rich range for both systems. In the extreme case of Ga–Sb alloys d
ρ/d
T is negative near the eutectic composition and the eutectic temperature, though
ρ itself shows a metallic value of an order of 100
μΩ
cm. The existence of an anomaly only in d
ρ/d
T implies that some hidden structure is present near the eutectic point in the respective liquid state. The anomalous behavior of
ρ was successfully explained by the existence of concentration fluctuations, based on the effective medium theory, for which three kinds of domains exist. These are the domains of the semiconductor-like GaSb intermetallic compound, of the metallic-like Sb and of the metallic homogeneous liquid. |
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ISSN: | 0022-3093 1873-4812 |
DOI: | 10.1016/S0022-3093(02)01666-6 |