The hidden structure in liquid IIIB–VB alloys

The electrical resistivity, ρ, of liquid Ga–Sb and In–Sb alloys was measured by the dc four probe technique. The value of ρ remains metallic in character and the simple parabolic shape of the Nordheim rule is observed, in spite of the existence of intermetallic compounds with semiconductor propertie...

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Bibliographic Details
Published inJournal of non-crystalline solids Vol. 312; pp. 222 - 226
Main Authors Aoki, Hirokatsu, Hotoduka, Koichi, Itami, Toshio
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.10.2002
Elsevier
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Summary:The electrical resistivity, ρ, of liquid Ga–Sb and In–Sb alloys was measured by the dc four probe technique. The value of ρ remains metallic in character and the simple parabolic shape of the Nordheim rule is observed, in spite of the existence of intermetallic compounds with semiconductor properties at the 1:1 composition. However, the concentration dependence of the temperature dependence of ρ, d ρ/d T, for these systems shows a minimum respectively at the eutectic compositions, which are present in the Sb-rich range for both systems. In the extreme case of Ga–Sb alloys d ρ/d T is negative near the eutectic composition and the eutectic temperature, though ρ itself shows a metallic value of an order of 100 μΩ cm. The existence of an anomaly only in d ρ/d T implies that some hidden structure is present near the eutectic point in the respective liquid state. The anomalous behavior of ρ was successfully explained by the existence of concentration fluctuations, based on the effective medium theory, for which three kinds of domains exist. These are the domains of the semiconductor-like GaSb intermetallic compound, of the metallic-like Sb and of the metallic homogeneous liquid.
ISSN:0022-3093
1873-4812
DOI:10.1016/S0022-3093(02)01666-6