The p-i-n junction-surface depletion-layer photodiode
With the aim of seeking the optimal structure for photodetectors, the p-i-n junction-surface depletion-layer photodiodes have been investigated. The structure of the photodiodes is different from that of the conventional photosensors. Experiments for the devices show that the structure of the p-i-n...
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Published in | IEEE electron device letters Vol. 12; no. 8; pp. 442 - 443 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.08.1991
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | With the aim of seeking the optimal structure for photodetectors, the p-i-n junction-surface depletion-layer photodiodes have been investigated. The structure of the photodiodes is different from that of the conventional photosensors. Experiments for the devices show that the structure of the p-i-n junction-surface depletion layer is very advantageous to the photodetector in becoming a high responsivity and wide-spectrum device. This device can be used in UV, visible and near-infrared ranges.< > |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/55.119159 |