The p-i-n junction-surface depletion-layer photodiode

With the aim of seeking the optimal structure for photodetectors, the p-i-n junction-surface depletion-layer photodiodes have been investigated. The structure of the photodiodes is different from that of the conventional photosensors. Experiments for the devices show that the structure of the p-i-n...

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Bibliographic Details
Published inIEEE electron device letters Vol. 12; no. 8; pp. 442 - 443
Main Author Yin, C.S.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.08.1991
Institute of Electrical and Electronics Engineers
Subjects
Absorption
Applied sciences
Electronics
Exact sciences and technology
Fingers
Helium
Optoelectronic devices
P-i-n diodes
Photodetectors
PIN photodiodes
Schottky barriers
Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Voltage
p n junction
Frequency response
Silicon
Photodiode
p i n diode
Implementation
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Summary:With the aim of seeking the optimal structure for photodetectors, the p-i-n junction-surface depletion-layer photodiodes have been investigated. The structure of the photodiodes is different from that of the conventional photosensors. Experiments for the devices show that the structure of the p-i-n junction-surface depletion layer is very advantageous to the photodetector in becoming a high responsivity and wide-spectrum device. This device can be used in UV, visible and near-infrared ranges.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.119159