35-GHz Intrinsic Bandwidth for Direct Modulation in 1.3- $mu$ m Semiconductor Lasers Subject to Strong Injection Locking

Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from e...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 16; no. 4; pp. 972 - 974
Main Authors Hwang, S.K., Liu, J.M., White, J.K.
Format Journal Article
LanguageEnglish
Published 01.04.2004
Subjects
Bandwidth
Injection locking
k factors
Lasers
Modulation
Photonics
Semiconductor lasers
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Summary:Significant enhancement in modulation bandwidth of semiconductor lasers subject to strong optical injection is experimentally and theoretically studied. At least two folds of improvement is achieved under study. By using an optical probing method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is observed in the injection-locked laser system. The achieved bandwidth approaches the maximum modulation bandwidth set by the K factor for the free-running laser. Discussions are presented for an even larger modulation bandwidth using the injection-locking technique.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1041-1135
DOI:10.1109/LPT.2004.824627