Structure and Optical Properties of InGaAsBi with up to 7% Bismuth

In y Ga 1-y As 1-x Bi x layers on InP:Fe (100) substrates have been grown by molecular beam epitaxy. Up to 7% of Bi incorporation has been confirmed by optical and structural analyses of grown samples. Photoluminescence signals at wavelengths up to 3 μm have been observed, implying In y Ga 1-y As 1-...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 5; no. 1; pp. 015503 - 015503-3
Main Authors Devenson, Jan, Pačebutas, Vaidas, Butkutė, Renata, Baranov, Alexei, Krotkus, Arūnas
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.01.2012
Online AccessGet full text

Cover

More Information
Summary:In y Ga 1-y As 1-x Bi x layers on InP:Fe (100) substrates have been grown by molecular beam epitaxy. Up to 7% of Bi incorporation has been confirmed by optical and structural analyses of grown samples. Photoluminescence signals at wavelengths up to 3 μm have been observed, implying In y Ga 1-y As 1-x Bi x to be a prospective material for mid-infrared applications. A weak band-gap temperature sensitivity of Bi-containing InGaAs has been evaluated from optical absorption measurements.
Bibliography:SIMS depth profiles of 200 nm In 0.53 Ga 0.47 As 1-x Bi x layer grown on 200 nm In 0.53 Ga 0.47 As buffer layer and InP substrate. PL spectra measured at 90 K on two In y Ga 1-y As 1-x Bi x samples grown at different temperatures: 280 °C (i107) and 240 °C (i111). AFM images of the samples grown at 240 °C with different As/Bi BEP ratios: (a) sample i112, $P_{\text{Bi}}=3.5\times 10^{-8}$ Torr; (b) sample i111, $P_{\text{Bi}}=2\times 10^{-8}$ Torr. XRD $\Theta/2\Theta$ scans of In 1-y Ga y As 1-x Bi x samples with slightly different incorporated amounts of Bi (a), and squared absorption coefficient curves measured on the same samples at room temperature (b). Inset shows the squared absorption coefficient, measured at 300 and 90 K. It demonstrates significantly weaker band-gap temperature dependence of Bi-containing layers.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.5.015503