Latent effects due to ESD in CMOS integrated circuits: review and experiments

A review of the current information published on the subject of EOS/ESD latent failures is presented. In order to gain a better understanding of the phenomena involved in the input protection networks of CMOS integrated circuits, measurements were performed on both commercially available integrated...

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Bibliographic Details
Published inIEEE transactions on industry applications Vol. 29; no. 1; pp. 88 - 97
Main Authors Greason, W.D., Kucerovsky, Z., Chum, K.W.K.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.01.1993
Institute of Electrical and Electronics Engineers
Subjects
Annealing
Applied sciences
CMOS integrated circuits
Design. Technologies. Operation analysis. Testing
Earth Observing System
Electronics
Electrostatic discharge
Exact sciences and technology
Gain measurement
Integrated circuit measurements
Integrated circuits
Performance evaluation
Performance gain
Protection
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thermal stresses
Thermal stress
Heat treatment
Electric stress
Electric discharge
Input circuit
Inverting device
Ultraviolet irradiation
Complementary MOS technology
Integrated circuit
Equivalent circuit
Test method
Electrostatics
Protection
Electrical characteristic
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Summary:A review of the current information published on the subject of EOS/ESD latent failures is presented. In order to gain a better understanding of the phenomena involved in the input protection networks of CMOS integrated circuits, measurements were performed on both commercially available integrated circuits and a set of custom designed and fabricated devices. The tests investigated the effects of electrical stress, thermal shock, exposure to ultraviolet light, and thermal annealing. The results demonstrate the presence of latent failures in CMOS integrated circuits following exposure to ESD. The cumulative effect of repeated discharge can be partially alleviated using thermal annealing or exposure to light. A charge injection model is proposed to interpret the results.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0093-9994
DOI:10.1109/28.195893