Laser doping of 2D material for precise energy band design

• Published in: Nanoscale Vol. 15; no. 21; pp. 9297 - 933
• Main Authors: Tan, Xiang, Wang, Shu, Zhang, Qiaoxuan, He, Juxing, Chen, Shengyao, Qu, Yusong, Liu, Zhenzhou, Tang, Yong, Liu, Xintong, Wang, Cong, Wang, Quan, Liu, Qian
• Format: Journal Article
• Language: English
• Published: England Royal Society of Chemistry 01.06.2023
• Subjects: Carrier density; Controllability; Direct laser writing; Doping; Energy bands; Molybdenum compounds; Multilayers; Tellurides; Two dimensional materials
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/d3nr00808h

The number of excellent 2D materials is finite for nano optoelectric devices including transistors, diodes, sensors, and so forth, thus the modulation of 2D materials is important to improve the performance of the current eligible 2D materials, and even to transform unqualified 2D materials into eligible 2D materials. Here we develop a fine laser doping strategy based on highly controllable laser direct writing, and investigate its effectivity and practicability by doping multilayer molybdenum ditelluride (MoTe 2 ). Power-gradient laser doping and patterned laser doping, for the first time, are presented for designable and fine doping of 2D materials. The laser-induced polar transition of MoTe 2 indicates good controllability of the method for the carrier concentration distribution in MoTe 2 . Multiple devices with finely tuned energy band structures are demonstrated by means of power-gradient laser doping and patterned laser doping, further illustrating the design capability of a precise energy band in 2D materials. The excellent 2D materials are finite for optoelectrical devices including transistors, diodes, sensors, and so on, thus modulation of the 2D materials is important to improve the performance of the current eligible 2D materials.