Correlations between properties and applications of the CVD amorphous silicon carbide films

• Published in: Applied surface science Vol. 184; no. 1; pp. 107 - 112
• Main Authors: Kleps, Irina, Angelescu, Anca
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 12.12.2001; Elsevier Science
• Subjects: a-SiC; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; FE applications; Liquid precursors; LPCVD; Materials science; Membranes fabrication; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Liquid precursors; LPCVD; Membranes fabrication; a-SiC; FE applications; CVD; Atomic force microscopy; Semiconductor thin films; Silicon Carbonitrides; Silicon carbides; Correlation methods; Wide band gap semiconductors; Surface topography; Photoelectron spectroscopy; Amorphous state structure; Surface structure
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(01)00484-6

The aim of this paper is to emphasise the correlation between film preparation conditions, film properties and their applications. Low pressure chemical vapour deposition amorphous silicon carbide (a-SiC) and silicon carbonitride (SiCN) films obtained from liquid precursors have different structure and composition depending on deposition conditions. Thus, the films deposited under kinetic working conditions reveal a stable structure and composition. Deposition at moderate temperature leads to stoichiometric SiC, while the films deposited at high temperatures have a composition closer to Si 1− x C x , with x=0.75. These films form a very reactive interface with metallic layers. The films realised under kinetic working regime can be used in Si membrane fabrication process or as coating films for field emission applications. SiC layers field emission properties were investigated; the field emission current density of the a-SiC/Si structures was 2.4 mA/cm 2 at 25 V/μm. An Si membrane technology based on moderate temperatures (770–850 °C) a-SiC etching mask is presented.