Current instabilities in GaAs/InAs self-aggregated quantum dot structures

• Published in: Applied surface science Vol. 190; no. 1; pp. 222 - 225
• Main Authors: Horváth, Zs.J., Frigeri, P., Franchi, S., Van Tuyen, Vo, Gombia, E., Mosca, R., Dózsa, L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 08.05.2002; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Current instability; Defects; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; GaAs/InAs; Minority injection; Physics; Quantum dots; Recombination; GaAs/InAs; Recombination; Quantum dots; Minority injection; Current instability; Defects; Gallium arsenides; Defect level; Charge carrier recombination; Binary compounds; Excess parameter; Transport processes; Minority carriers; Indium arsenides; Charge carrier injection
• DOI: 10.1016/S0169-4332(01)00872-8
• ISSN: 0169-4332

Excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with recombination through defects originated from the formation of QDs. The instabilities are connected with unstable occupation of energy levels induced by the above defects, which depend on temperature and on the current level.