Current instabilities in GaAs/InAs self-aggregated quantum dot structures

Excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with recombinatio...

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Published inApplied surface science Vol. 190; no. 1; pp. 222 - 225
Main Authors Horváth, Zs.J., Frigeri, P., Franchi, S., Van Tuyen, Vo, Gombia, E., Mosca, R., Dózsa, L.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 08.05.2002
Elsevier Science
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Current instability
Defects
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
GaAs/InAs
Minority injection
Physics
Quantum dots
Recombination
GaAs/InAs
Recombination
Quantum dots
Minority injection
Current instability
Defects
Gallium arsenides
Defect level
Charge carrier recombination
Binary compounds
Excess parameter
Transport processes
Minority carriers
Indium arsenides
Charge carrier injection
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Summary:Excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with recombination through defects originated from the formation of QDs. The instabilities are connected with unstable occupation of energy levels induced by the above defects, which depend on temperature and on the current level.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(01)00872-8