Annealing effect on structures and luminescence of amorphous SiN films

The microstructures and chemical bonding configurations of amorphous silicon nitride films with various compositions are investigated. Room temperature photoluminescence is observed which depended on the film concentrations. The post-annealing treatment at moderate temperature region of 700–900 °C i...

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Bibliographic Details
Published inMaterials letters Vol. 61; no. 28; pp. 5010 - 5013
Main Authors Xu, Jun, Rui, Yunjun, Chen, Deyuan, Mei, Jiaxin, Zhou, Liping, Cen, Zhanhong, Li, Wei, Chen, Kunji
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.11.2007
Subjects
Chemical vapor deposition
Luminescence
Optical materials and properties
Optical materials and properties
Chemical vapor deposition
Luminescence
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Summary:The microstructures and chemical bonding configurations of amorphous silicon nitride films with various compositions are investigated. Room temperature photoluminescence is observed which depended on the film concentrations. The post-annealing treatment at moderate temperature region of 700–900 °C is performed and the annealing effect on the structures and luminescence is studied. It is found that the structural rearrangements occurred after thermal annealing due to the effusion of hydrogen from the films. The luminescence is also changed after annealing and the possible originations are briefly discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2007.03.095