Conductivity of boron-doped diamond at high electrical field
Electrical properties of epitaxial boron-doped diamond layers are studied at high electric fields in a wide range of boron concentration. Current-voltage characteristics co-planar concentric disk ring electrodes devices were measured using transmission line pulsed (TLP) characterization technique. F...
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Published in | Diamond and related materials Vol. 98; p. 107476 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.10.2019
Elsevier BV |
Subjects | |
Online Access | Get full text |
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Summary: | Electrical properties of epitaxial boron-doped diamond layers are studied at high electric fields in a wide range of boron concentration. Current-voltage characteristics co-planar concentric disk ring electrodes devices were measured using transmission line pulsed (TLP) characterization technique. Finite element method shows the electric field between test structures with co-planar plane parallel electrodes, used in previous studies, and concentric disk ring electrodes are comparable for inner ring electrode with a large diameter. The threshold electric field for the observed sudden increase of current, attributed to impurity impact ionization and/or self-heating, decreases from 130 kV·cm−1 to 70 kV·cm−1 with the increasing boron concentration in the epitaxial diamond layer. The measured quasi-static current grows exponentially with the electric field for energy dissipated in the devices limited below 2 μJ.
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•Breakdown field steadily decreases with the increasing boron concentration.•Current grows exponentially with the electrical field.•Devices with parallel and circular electrodes generate comparable electric field. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2019.107476 |