Conductivity of boron-doped diamond at high electrical field

• Published in: Diamond and related materials Vol. 98; p. 107476
• Main Authors: Mortet, V., Drbohlavova, L., Lambert, N., Taylor, A., Ashcheulov, P., Davydova, M., Lorincik, J., Aleshin, M., Hubik, P.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2019; Elsevier BV
• Subjects: Boron; Boron-doped diamond; Current voltage characteristics; Diamonds; Electric fields; Electrical properties; Electrical resistivity; Electrodes; Energy dissipation; Epitaxial growth; Finite element method; High electric field; Transmission lines; Electrical properties; Boron-doped diamond; High electric field
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2019.107476

Electrical properties of epitaxial boron-doped diamond layers are studied at high electric fields in a wide range of boron concentration. Current-voltage characteristics co-planar concentric disk ring electrodes devices were measured using transmission line pulsed (TLP) characterization technique. Finite element method shows the electric field between test structures with co-planar plane parallel electrodes, used in previous studies, and concentric disk ring electrodes are comparable for inner ring electrode with a large diameter. The threshold electric field for the observed sudden increase of current, attributed to impurity impact ionization and/or self-heating, decreases from 130 kV·cm−1 to 70 kV·cm−1 with the increasing boron concentration in the epitaxial diamond layer. The measured quasi-static current grows exponentially with the electric field for energy dissipated in the devices limited below 2 μJ. [Display omitted] •Breakdown field steadily decreases with the increasing boron concentration.•Current grows exponentially with the electrical field.•Devices with parallel and circular electrodes generate comparable electric field.