Spin-valve RAM cell

• Published in: IEEE transactions on magnetics Vol. 31; no. 6; pp. 3206 - 3208
• Main Authors: Tang, D.D., Wang, P.K., Speriosu, V.S., Le, S., Kung, K.K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.11.1995; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Copper; Electronics; Exact sciences and technology; Magnetic devices; Magnetic domain walls; Magnetic materials; Magnetization; Nonvolatile memory; Other magnetic recording and storage devices (including tapes, disks, and drums); Random access memory; Read-write memory; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Spin valves; Switches; Wires; Characterization; Design; Thin films; Magnetoresistive device; Thin film device; Magnetic storage devices; Output voltage; Ferromagnetic materials; Storage system; Magnetoresistance; Magnetic device; Magnetic recording
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/20.490329

This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.