High-efficiency low adjacent channel leakage GaAs power MMIC for 1.9 GHz digital cordless phones

• Published in: IEEE transactions on microwave theory and techniques Vol. 42; no. 12; pp. 2623 - 2628
• Main Authors: Yokoyama, T., Kunihisa, T., Fujimoto, H., Takehara, H., Ishida, K., Ikeda, H., Ishikawa, O.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.12.1994; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Batteries; Equipments and installations; Exact sciences and technology; Fabrication; FETs; Gallium arsenide; Knee; Low voltage; MESFET integrated circuits; MMICs; Mobile radiocommunication systems; Nonlinear distortion; Radiocommunications; Telecommunications; Telecommunications and information theory; Telephone sets; Gallium Arsenides; Field effect transistor; Wireless telecommunication; Microwave; Adjacent channel; Monolithic integrated circuit; Chip; Metal semiconductor field effect transistor
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/22.339806

We report on the fabrication of highly efficient GaAs MESFET's, the design for low distortion, and the performance of this MMIC. Two power MESFET's and input, interstage, and output matching circuits were integrated in a very small chip size of 1.0 mm/spl times/1.5 mm. This MMIC achieved an output power of 22 dBm at 1.9 GHz with high power added efficiency of 49.5% and low adjacent channel leakage power of -56 dBc under the low operating voltage of 3.0 V. This result represents one of the highest efficiencies that have been reported. This MMIC has a promising future for 1.9 GHz digital cordless phone applications.< >