Visible electroluminescence from amorphous hydrogenated silicon carbide prepared by using organic carbon source

• Published in: Diamond and related materials Vol. 12; no. 10; pp. 1932 - 1935
• Main Authors: Huang, Xiaohui, Ma, Tianfu, Xu, Jun, Li, Zhifeng, Mei, Jiaxin, Li, Xin, Li, Wei, Huang, Xinfan, Chen, Kunji
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.2003; Elsevier
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition; Electroluminescence; Exact sciences and technology; Luminescence; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other luminescence and radiative recombination; Physics; Silicon carbide; Deposition; Silicon carbide; Luminescence; Ultrathin films; Silicon carbides; Binary compounds; Electroluminescence; Experimental study; Thin films; CVD; Growth from vapor; Amorphous hydrogenated material; Preparation; PECVD
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/S0925-9635(03)00281-4

A series of amorphous silicon carbide (a-SiC:H) films were prepared by using an organic carbon source, xylene, in a plasma chemical vapor deposition system. Visible electroluminescence (EL) was observed from the device structures of Al/a-Si:H/a-SiC:H/ITO/glass at room temperature. The EL peak was changed from 2.0 to 2.3 eV with increasing carbon content in a-SiC:H films and the EL devices have open voltages at approximately 2.5 V. The EL behavior was investigated and the influence of the EL device structure was also discussed in the paper.