Tin antimony sulfide (Sn6Sb10S21) thin films by heating chemically deposited Sb2S3/SnS layers: Studies on the structure and their optoelectronic properties

• Published in: Journal of alloys and compounds Vol. 827; p. 154256
• Main Authors: Devasia, Sebin, Shaji, S., Avellaneda, D.A., Aguilar Martinez, J.A., Krishnan, B.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 25.06.2020; Elsevier BV
• Subjects: Absorptivity; Antimony; Chemical bath deposition; Crystallization; Electrical properties; Glass substrates; Heating; Low vacuum; Mathematical analysis; Morphology; Optical properties; Optoelectronics; Photoconductivity; Photoelectrons; Photovoltaic conversion; Raman spectroscopy; Solar cell; Ternary systems; Thin film; Thin films; Tin antimony sulfide; Solar cell; Tin antimony sulfide; Chemical bath deposition; Photoconductivity; Thin film
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2020.154256

Tin antimony sulfide thin films (Sn6Sb10S21) were obtained on glass substrates by heating chemical bath deposited Sb2S3/SnS layers. The report primarily focuses on the structure, composition, morphology, optical and electrical properties of the thin films formed at the temperature range of 300–450 °C for 30 min as well as at the optimized temperature of 390 °C for 1, 2 and 3 h in low vacuum. X-ray diffraction and Raman analysis revealed the crystallization of ternary phase Sn6Sb10S21 at temperatures higher than 390 °C. X-ray photoelectron study identified the presence of Sn2+, Sb3+ and S2- states in the ternary phase and the depth profile analysis exhibited a uniform distribution of elements throughout the thickness. Further, surface morphology of the as-deposited and annealed thin films were examined using scanning electron microscopy. The optical band gaps calculated from the UV–Vis–NIR spectra were in the range of 1.26–1.45 eV with significantly high absorption coefficients (∼105 cm−1) which is ideal for photovoltaic conversion. Moreover, the thin films were photoconductive and when incorporated into the photovoltaic structure, Glass/FTO/CdS/ASTS/C–Ag, demonstrated photovoltaic performance. The corresponding parameters Voc, Jsc, and FF were evaluated from the J-V curves yielding the values 409 mV, 1.46 mAcm−2 and 0.25 respectively. [Display omitted] •First report of Sn6Sb10S21 absorber thin films obtained through CBD route.•Phase formation at relatively lower temperatures around 375–390 °C.•High absorption coefficients (>105 cm−1) and optimum bandgap values (1.26–1.45 eV).•Incorporation of the new absorber in FTO/CdS/Sn6Sb10S21/C–Ag photovoltaic structure.