Viscosity of Ga-rich alloys in the Ga-In-Sn system
The viscosity of Ga-In-Sn liquid alloys has been measured from liquidus temperature to 1200 K in the Ga-rich corner (content of gallium above 71 at. %) using an oscillating cup viscometer. The temperature dependence of the viscosity of the investigated alloys is well described by the Arrhenius law....
Saved in:
Published in | Journal of alloys and compounds Vol. 789; pp. 66 - 70 |
---|---|
Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Lausanne
Elsevier B.V
15.06.2019
Elsevier BV |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The viscosity of Ga-In-Sn liquid alloys has been measured from liquidus temperature to 1200 K in the Ga-rich corner (content of gallium above 71 at. %) using an oscillating cup viscometer. The temperature dependence of the viscosity of the investigated alloys is well described by the Arrhenius law. Isotherms of the viscosity for Ga-In-Sn liquid alloys in the Ga-rich corner can be represented as a linear dependence on the gallium content. The viscosity of the investigated alloys near the liquidus temperature has a positive deviation from the ideal value. These alloys behave as ideal solutions at higher temperatures. As the comparison of existing phenomenological models describing the viscosity as a function of composition to the experimental data is unsatisfactory, a new model for the viscosity has been developed in the present work using the concentration-concentration fluctuations structure factor in the long-wavelength limit. The agreement between the model calculation and experimental data for Ga-based alloys is excellent.
•The viscosity of Ga-In-Sn melts was measured up to 1200 K in the Ga-rich corner.•The measurement was carrying out using the oscillating cup viscometer.•Viscosity isotherms of the melts have a linear dependence on the Ga content.•An improved model for calculating viscosity has been developed.•This model exactly describes the viscosity of Ga-based eutectic systems. |
---|---|
ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2019.03.107 |