High quality β-FeSi2 epitaxial film grown on hydrogen terminated Si (111) by molecular beam epitaxy

A high quality β-FeSi2 epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si (111) at 580 °C by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 film grown with stoichiometric Fe/Si source flux ratio 1:2 has a superior mor...

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Bibliographic Details
Published inMaterials letters Vol. 59; no. 18; pp. 2370 - 2373
Main Authors Ji, S.Y., Lalev, G.M., Wang, J.F., Uchikoshi, M., Isshiki, M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.2005
Subjects
Epitaxial growth
MBE
Semiconductor
β-FeSi2
β-FeSi2
MBE
Semiconductor
Epitaxial growth
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Summary:A high quality β-FeSi2 epitaxial film with the thickness of 180 nm has been successfully grown for the first time on hydrogen terminated Si (111) at 580 °C by using solid source molecular beam epitaxy (SS-MBE). The β-FeSi2 film grown with stoichiometric Fe/Si source flux ratio 1:2 has a superior morphology and crystallinity comparing to the published results of the films grown by other methods. X-ray diffraction (XRD) spectra confirmed that the obtained β-FeSi2 film was single crystal. Scanning electron microscope (SEM) images showed a good morphology with large flat surface areas of the obtained β-FeSi2 film.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2005.01.088