Nitrogen and phosphorus implanted MESFETs in semi-insulating 4H-SiC

• Published in: Diamond and related materials Vol. 11; no. 3-6; pp. 392 - 395
• Main Authors: Tucker, J.B., Mitra, S., Papanicolaou, N., Siripuram, A., Rao, M.V., Holland, O.W.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2002; Elsevier
• Subjects: Annealing; Applied sciences; Electronics; Exact sciences and technology; Ion-implantation; MESFET; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SiC; Transistors; MESFET; Annealing; SiC; Ion-implantation; Performance evaluation; Ion implantation; Silicon carbide; Drain current; n channel; Pinch off voltage; Nitrogen addition; Metal semiconductor field effect transistor; Phosphorus addition; Electrical characteristic
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/S0925-9635(01)00610-0

Nitrogen and phosphorus ion implantation were used to fabricate 2 μm gate length, n-channel Metal-Semiconductor Field-Effect-Transistors (MESFETs) in semi-insulating bulk 4H-SiC. In order to create the channel region, either nitrogen or phosphorus ion-implantations was performed to a depth of 300 nm at room temperature to a volumetric concentration of 5×1017 cm−3. The source/drain regions were created by nitrogen implantation to a volumetric concentration of 2×1019 cm−3, regardless of the species used for the channel implantation. Annealing for a duration of 15 min at 1450 °C (for nitrogen-implanted channels) or 1500 °C (for phosphorus-implanted channels) activated the implants. This study utilized aluminum Schottky gates for the FETs. Both the nitrogen and phosphorus-implanted channel MESFETS exhibited pinch-off voltages at approximately 18 V and the drain saturation currents between 30 and 40 mA.