Catalytic decomposition of SiH4 on a hot filament

• Published in: Thin solid films Vol. 395; no. 1-2; pp. 42 - 46
• Main Authors: Tange, Shinya, Inoue, Keisuke, Tonokura, Kenichi, Koshi, Mitsuo
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 03.09.2001; Elsevier Science
• Subjects: Chemical kinetics; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Hot filament CVD; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; REMPI; Silanes; Theory and models of film growth; Silanes; Chemical kinetics; REMPI; Hot filament CVD; Solar cells; Semiconductor materials; Films; Polycrystals; Mass spectroscopy; Crystal growth from vapors; Amorphous state; Experimental study; Hot wire; Precursor; Radicals; CVD; Growth from vapor; Chemical decomposition; Catalysis; Kinetics; Microcrystal
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(01)01204-4

The products of SiH4 decomposition on the surface of various filaments were directly detected by using vacuum ultraviolet (VUV) photo-ionization mass spectrometry under collision-free conditions. SiH2 and SiH3 were detected at filament temperatures of approximately Tf∼1300 K, where silicide formation on the filament was observed. At higher temperatures, the SiH2 and SiH3 signal intensities decreased and Si atom signal increased. It was confirmed that the Si atoms were the main species desorbed from the tungsten filament at Tf>1700 K. H atoms were also detected as a direct desorbed species from the filament by using the [2+1] resonance enhanced multi-photon ionization (REMPI) method combined with time-of-flight (TOF) mass spectrometry. Gas phase chemical reactions of SiH4 with desorbed radicals (Si and H atoms) were also investigated. Si2H6, Si2H4 and Si2 could be detected as products of gas phase reactions. A chemical kinetic mechanism starting with Si+SiH4 and H+SiH4 reactions was proposed to explain the formation of Si2H6 and Si2H4.