Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range

• Published in: Optics express Vol. 30; no. 22; pp. 39329 - 39339
• Main Authors: Soltanian, Emadreza, Muliuk, Grigorij, Uvin, Sarah, Wang, Dongbo, Lepage, Guy, Verheyen, Peter, Van Campenhout, Joris, Ertl, Stefan, Rimböck, Johanna, Vaissiere, Nicolas, Néel, Delphine, Ramirez, Joan, Decobert, Jean, Kuyken, Bart, Zhang, Jing, Roelkens, Gunther
• Format: Journal Article
• Language: English
• Published: 24.10.2022
• ISSN: 1094-4087; 1094-4087
• DOI: 10.1364/OE.470497

In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing ( µ TP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec’s silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer. By combining the outputs of the two laser cavities on chip, wavelength tunability over S+C+L-bands is achieved.