Electrical characteristics of Mg-doped GaN activated with Ni catalysts

• Published in: Applied surface science Vol. 190; no. 1; pp. 348 - 351
• Main Authors: Kamii, Y., Waki, I., Fujioka, H., Oshima, M., Miki, H., Okuyama, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 08.05.2002; Elsevier Science
• Subjects: Activation; Catalysis; Catalysts: preparations and properties; Chemistry; Exact sciences and technology; General and physical chemistry; Hall effect; p-GaN; Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry; Thermal annealing; p-GaN; Activation; Hall effect; Thermal annealing; Annealing; Donor; Doped materials; Nickel; Gallium nitride; Catalyst; Acceptors; Magnesium addition; Electrical characteristic
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(01)00846-7

Electrical characteristics of Mg-doped p-GaN activated with Ni catalytic layers have been investigated by means of temperature-dependent Hall effect measurements. It has been revealed that the Ni layer on GaN enhances activation of the acceptor in the whole annealing temperature range. This enhancement is remarkable especially at temperatures below 500 °C and can be attributed to the catalytic effect for the hydrogen desorption. We have found that the donor concentrations in the samples activated with the Ni catalysts are also higher than those activated without Ni. This is probably due to the catalytic effect of Ni for the nitrogen desorption. In addition, it has been found that the ionization energies of the Mg acceptors in GaN activated with the Ni layer are decreased from 170 to 118 meV as the acceptor concentration increases.