High performance solar-blind ultraviolet photo detector based on mixed-phase MgZnO thin film with different interfaces deposited by PLD method

MSM structure UV detectors were fabricated on mixed-phase MgZnO thin films with (200) cubic MgZnO/hexagonal MgZnO and (111) cubic MgZnO/hexagonal MgZnO interfaces by PLD method. Under 25 V bias voltage, the maximum responsivity of the mix-phase MgZnO based detector with (002) cubic MgZnO/hexagonal M...

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Bibliographic Details
Published inJournal of alloys and compounds Vol. 694; pp. 168 - 174
Main Authors Han, S., Liu, S.M., Lu, Y.M., Cao, P.J., Liu, W.J., Zeng, Y.X., Jia, F., Liu, X.K., Zhu, D.L.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 15.02.2017
Elsevier BV
Subjects
Background noise
Chemical compounds
Detectors
Interfaces
Mix-phaseMgZnO
Sensors
Solar-blind
Thin films
Ultraviolet radiation
UV response
Interfaces
UV response
Mix-phaseMgZnO
Solar-blind
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Summary:MSM structure UV detectors were fabricated on mixed-phase MgZnO thin films with (200) cubic MgZnO/hexagonal MgZnO and (111) cubic MgZnO/hexagonal MgZnO interfaces by PLD method. Under 25 V bias voltage, the maximum responsivity of the mix-phase MgZnO based detector with (002) cubic MgZnO/hexagonal MgZnO interfaces reached 8 A/W at 256 nm because of 3809% internal gain of the detector at solar-blind UV light, which is two order of magnitude bigger than the detector with (111) cubic MgZnO/hexagonal MgZnO interfaces. The higher density of interface states between (200) cubic and hexagonal MgZnO grains in the mix-phase MgZnO thin film is main reason for its big internal gain and high solar-blind UV response. The Idark of the mixed-phase MgZnO based detector with (111) cubic MgZnO/hexagonal MgZnO interfaces is much smaller and the Ilight/Idark of which is higher because of the higher interfaces barrier at (111) cubic MgZnO/hexagonal MgZnO interfaces, so the detector could effectively detect faint solar-blind UV signal more under strong noise background. •Mix-phase MgZnO thin films were made with different interface by PLD.•The UV response of MgZnO with (200) c-MgZnO/h-MgZnO interface reached 8 A/W.•The higher density of interface states in the sample cause the high UV response.•The Ilight/Idark of MgZnO with (111) c-MgZnO/h-MgZnO interface is higher.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2016.09.313