Optical and electrical oscillations in double-heterojunction negative differential resistance devices
The observation of optical and electrical oscillations is reported in a GaAs/AlGaAs digital optoelectronic switch (DOES) structure. The oscillations are correlated to the negative differential resistance (NDR) region typically observed in the current-voltage (I-V) characteristics of this heterostruc...
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Published in | IEEE transactions on electron devices Vol. 40; no. 6; pp. 1154 - 1160 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.06.1993
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | The observation of optical and electrical oscillations is reported in a GaAs/AlGaAs digital optoelectronic switch (DOES) structure. The oscillations are correlated to the negative differential resistance (NDR) region typically observed in the current-voltage (I-V) characteristics of this heterostructure. Plateaulike DC I-V characteristics in the NDR region and an apparent enhancement of the DC luminescence are shown to be a direct result of device oscillations in the NDR regime. External and intrinsic circuit parameters are demonstrated to determine the temporal characteristics of both the electrical and optical oscillations. These oscillations can be of sufficient magnitude to induce lasing at apparently very low DC current levels. It is shown that an external optical pulse can be used to induce the extent of the NDR region and thereby quench optical oscillations. In this manner, an optically controlled free-running optical oscillator is demonstrated.< > |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/16.214743 |