On the go with SONOS

Advancements in scaling gate insulators for MOS transistors permit low-voltage, silicon-oxide-nitride-silicon (SONOS) nonvolatile semiconductor memories (NVSMs) for a wide range of applications. The continued scaling of SONOS devices offers improved performance with a small cell size, single-level p...

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Bibliographic Details
Published inIEEE circuits and devices magazine Vol. 16; no. 4; pp. 22 - 31
Main Authors White, M.H., Adams, D.A., Bu, J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Charge pumps
Circuits
Conductive films
Dielectric thin films
Electrodes
Nonvolatile memory
Semiconductor device reliability
SONOS devices
Temperature
Voltage
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Summary:Advancements in scaling gate insulators for MOS transistors permit low-voltage, silicon-oxide-nitride-silicon (SONOS) nonvolatile semiconductor memories (NVSMs) for a wide range of applications. The continued scaling of SONOS devices offers improved performance with a small cell size, single-level polysilicon with low voltage, fast erase/write, improved memory retention, increased endurance, and radiation hardness. In this article, we discuss scaled SONOS devices, SONOS memory technology, and some SONOS NVSM applications.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:8755-3996
1558-1888
DOI:10.1109/101.857747