Modification of Al/Si interface and Schottky barrier height with chemical treatment

• Published in: Applied surface science Vol. 190; no. 1; pp. 441 - 444
• Main Authors: Horváth, Zs.J., Ádám, M., Szabó, I., Serényi, M., Van Tuyen, Vo
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 08.05.2002; Elsevier Science
• Subjects: Chemical treatment; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Interface modification; Ohmic contact; Physics; Schottky barrier; Silicon; Surface double layers, schottky barriers, and work functions; Surface passivation; Silicon; Ohmic contact; Interface modification; Chemical treatment; Surface passivation; Schottky barrier; Annealing; Schottky barriers; n-type conductors; Controlled atmospheres; Aluminium; Boiling; Energy gap; Plasma etching; Barrier height; p-type conductors; Passivation
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(01)00912-6

The influence of different chemical treatments on the electrical behaviour of n- and p-type Al/Si Schottky junctions was studied. A Schottky barrier height of 0.91 eV was achieved on p-type Si probably due to the unpinning of the Fermi-level at the Al/Si interface. This is one of the highest barrier height values reported so far for a solid-state Schottky junction prepared to p-Si. A doping level reduction was observed in the vicinity of the Si surface for wafers with native oxide and for those boiled in acetone or annealed in forming gas. It was observed unexpectedly that the reactive plasma etch used for the formation of mesa structures decreases the apparent Schottky barrier height. The relation between the sum of n- and p-type Schottky barrier heights and forbidden gap is discussed.