Magnetic and optical properties of GaMnN grown by ammonia-source molecular-beam epitaxy

• Published in: Journal of crystal growth Vol. 252; no. 4; pp. 499 - 504
• Main Authors: Hashimoto, M., Zhou, Y.K., Tampo, H., Kanamura, M., Asahi, H.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2003; Elsevier
• Subjects: A3. Molecular beam epitaxy; B1. Nitrides; B2. Magnetic Materials; B2. Semiconducting III–V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Magnetic films and multilayers; Magnetic properties and materials; Magnetic properties of surface, thin films and multilayers; Magnetic semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other solid inorganic materials; Photoluminescence; Physics; Studies of specific magnetic materials; 75.50.Pp; A3. Molecular beam epitaxy; B1. Nitrides; B2. Magnetic Materials; B2. Semiconducting III–V materials; 68.55Bd; Temperature dependence; Raman spectra; Inorganic compounds; Epitaxial layers; Magnetization; Gallium nitrides; Transition element compounds; Photoluminescence; Crystal growth from vapors; XRD; 75.50.Pp 68.55Bd A3. Molecular beam epitaxy; Experimental study; Dilute magnetic materials; Magnetic semiconductors; Nitrides; Ammonia; B2 .Semiconducting III-V materials; Phase separation; Molecular beam epitaxy; Heteroepitaxy; Manganese nitrides; Magnetic properties
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(03)00946-1

Diluted magnetic semiconductor GaMnN layers were grown on sapphire substrates by ammonia-source molecular-beam epitaxy. Phase-separation in a sample with large Mn content was confirmed by X-ray diffraction and Raman scattering measurements. Two distinct regions were observed in the magnetization versus temperature curves for both phase-separated and non-phase-separated samples. The samples exhibited ferromagnetic characteristics at high temperatures and paramagnetic characteristics at low temperatures, while the phase-separated sample showed the strongest ferromagnetic character. It is considered that the non-phase-separated GaMnN is primarily paramagnetic and that the phase-separated GaMnN is dominated by the ferromagnetism of Mn-based compounds at above 50 K. Strong photoluminescence emission peaking at 3.35 eV was observed in the non-phase-separated samples, attributable to band-to-band-like transition in GaMnN. The results will enable us to fabricate novel devices with magnetic and light-emitting functions.