Sn thin film growth on Si(1 1 1) surface studied by CAICISS

• Published in: Surface science Vol. 515; no. 1; pp. 199 - 204
• Main Authors: Ryu, J.T, Katayama, M, Oura, K
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.08.2002; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Growth; Ion scattering spectroscopy; Low energy ion scattering (LEIS); Metallic films; Physics; Polycrystalline thin films; Silicon; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surface structure, morphology, roughness, and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Tin; Polycrystalline thin films; Growth; Low energy ion scattering (LEIS); Tin; Metallic films; Ion scattering spectroscopy; Silicon; Surface structure, morphology, roughness, and topography; Metallic thin films; Ion scattering; Growth mechanism; Heteroepitaxy; Polysilicon; Crystal faces; Solid-solid interfaces; Rough surfaces; Surface topography; Experimental study; Surface structure
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/S0039-6028(02)01885-X

Using coaxial impact–collision ion scattering spectroscopy, we have investigated Sn thin film growth on Si(1 1 1)7×7 and Si(1 1 1)√3×√3–Sn surfaces at room temperature. Sn grows epitaxially with body-centered-tetragonal structure (β-Sn) both on Si(1 1 1)7×7 surface and √3×√3-Sn surface. However, these epitaxial Sn layers exhibit markedly different growth orientations; the Sn layers on the Si(1 1 1)7×7 substrates have β-Sn(1 0 0) 〈0 1 1〉 //Si(1 1 1) 〈0 1 ̄ 1〉 and β-Sn(1 0 0) 〈0 1 0〉 //Si(1 1 1) 〈 1 ̄ 1 ̄ 2〉 orientations, while those on the √3×√3-Sn surface have β-Sn(1 0 0) 〈0 1 0〉 // Si(1 1 1) 〈0 1 ̄ 1〉 and β-Sn(1 0 0) 〈0 1 1〉 // Si(1 1 1) 〈 1 ̄ 1 ̄ 2〉 ones. These results reveal that the growth orientation of the epitaxial Sn layers is rotated by 30° with regard to that on a clean Si(1 1 1) surface by the presence of the √3×√3-Sn phase at the initial stage of the Sn growth.