A nonvolatile magnon field effect transistor at room temperature

• Published in: Nature communications Vol. 15; no. 1; pp. 9314 - 8
• Main Authors: Cheng, Jun, Yu, Rui, Sun, Liang, He, Kang, Ji, Tongzhou, Yang, Man, Zhang, Zeyuan, Hu, Xueli, Niu, Heng, Yang, Xi, Chen, Peng, Chen, Gong, Xiao, Jiang, Huang, Fengzhen, Lu, Xiaomei, Cai, Hongling, Yuan, Huaiyang, Miao, Bingfeng, Ding, Haifeng
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 29.10.2024; Nature Publishing Group; Nature Portfolio
• Subjects: 639/301/119/1001; 639/766/119/1001; Data processing; Electron spin; Energy efficiency; Ferroelectric materials; Ferroelectricity; Field effect transistors; Global economy; Humanities and Social Sciences; Industrial development; Information industry; Information processing; Lead zirconate titanates; Magnons; multidisciplinary; Room temperature; Science; Science (multidisciplinary); Semiconductor devices; Transistors; Voltage; Voltage pulses
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-024-53524-7

Information industry is one of the major drivers of the world economy. Its rapid growth, however, leads to severe heat problem which strongly hinders further development. This calls for a non-charge-based technology. Magnon, capable of transmitting spin information without electron movement, holds tremendous potential in post-Moore era. Given the cornerstone role of the field effect transistor in modern electronics, creating its magnonic equivalent is highly desired but remains a challenge. Here, we demonstrate a nonvolatile three-terminal lateral magnon field effect transistor operating at room temperature. The device consists of a ferrimagnetic insulator (Y 3 Fe 5 O 12 ) deposited on a ferroelectric material [Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 or Pb(Zr 0.52 Ti 0.48 )O 3 ], with three Pt stripes patterned on Y 3 Fe 5 O 12 as the injector, gate, and detector, respectively. The magnon transport in Y 3 Fe 5 O 12 can be regulated by the gate voltage pulses in a nonvolatile manner with a high on/off ratio. Our findings provide a solid foundation for designing energy-efficient magnon-based devices. Searching non-charge-based devices is crucial for sustainable information processing. Here, the authors make a nonvolatile magnon field effect transistor at room temperature, enabling efficient magnon transport control via the gate voltage pulses.