Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers

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Bibliographic Details
Published inScientific reports Vol. 14; no. 1; p. 9334
Main Authors Cao, Weicheng, Song, Chunyan, Liao, Hui, Yang, Ningxuan, Wang, Rui, Tang, Guanghui, Ji, Hongyu
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 23.04.2024
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Bibliography:correction
SourceType-Other Sources-1
content type line 63
ObjectType-Correction/Retraction-1
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-024-60017-6