Development of a High-Speed Switching Silicon Carbide Power Module

We developed a silicon carbide (SiC) power module that can switch large currents at high speed. The withstand voltage of this power module is 1200 V, and two SiC MOSFETs are built-in and constitute a circuit for one inverter phase. This power module incorporates a snubber circuit for reducing the su...

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Bibliographic Details
Published inMaterials science forum Vol. 963; pp. 864 - 868
Main Authors Tanisawa, Hidekazu, Harada, Shinsuke, Sato, Shinji, Kobayashi, Yusuke, Koui, Kenichi, Watanabe, Kinuyo, Sato, Hiroshi, Kato, Fumiki, Yamaguchi, Hiroshi, Murakami, Yoshinori
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 19.07.2019
Subjects
Circuits
Electric potential
High speed
Modules
MOSFETs
Silicon carbide
Switching
High Current Density
Power Module
Silicon Carbide IE-UMOSFET
Switching Test
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Summary:We developed a silicon carbide (SiC) power module that can switch large currents at high speed. The withstand voltage of this power module is 1200 V, and two SiC MOSFETs are built-in and constitute a circuit for one inverter phase. This power module incorporates a snubber circuit for reducing the surge voltage generated by the SiC MOSFET for high-speed switching. In this study, switching at 270 A (a current density of 1000 A/cm 2 or more for the SiC MOSFET) was performed to evaluate this module. The turn-off switching time tf was ~10 ns, and the maximum dv/dt was 80 kV/us. Furthermore, this research examines the design and performance of the proposed power module.
Bibliography:Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.963.864