One-dimensional mesopore-array formation on low doped N-type silicon

• Published in: Electrochemistry communications Vol. 9; no. 7; pp. 1491 - 1496
• Main Authors: Bao, X.Q., Jiao, J.W., Wang, Y.L., Zhang, Y., Ge, D.H., Na, Kyoung Won, Choi, H.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.07.2007; Amsterdam Elsevier Science; New York, NY
• Subjects: 1D mesopore array; Breakdown mechanism; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Linear defects; Materials science; Physics; Porous materials; granular materials; SCR effects; Specific materials; Linear defects; 1D mesopore array; Breakdown mechanism; SCR effects; ID mesopore array; Electrolyte solution; Porous materials; Space charge; Doped materials; One dimensional structure; Mechanism; Mesoporosity; Defects; Aqueous solutions; Education; Hydrofluoric acid; Silicon; Arrays; Physicochemical properties
• ISSN: 1388-2481; 1873-1902
• DOI: 10.1016/j.elecom.2007.02.010

The mechanism concerning mesopore formation remains unclear to date. In this letter, linear nuclei were pre-structured on purpose; anodizing with aqueous HF electrolyte, one-dimensional (1D) arrays of mesopores with depths up to 40 μm and diameters down to 20 nm (aspect ratios up to 1300) were fabricated in the dark. Significantly higher pore densities and markedly weaker branches occurred in comparison to randomly formed mesopores. Pore densities could increase with decreased current densities. Breakdown effects combined with current-burst-model were employed to interpret the underlying mechanism in detail; SCR (space charge region) effects were excluded as additional stabilizer of the 1D mesopore arrays.