One-dimensional mesopore-array formation on low doped N-type silicon
The mechanism concerning mesopore formation remains unclear to date. In this letter, linear nuclei were pre-structured on purpose; anodizing with aqueous HF electrolyte, one-dimensional (1D) arrays of mesopores with depths up to 40 μm and diameters down to 20 nm (aspect ratios up to 1300) were fabri...
Saved in:
Published in | Electrochemistry communications Vol. 9; no. 7; pp. 1491 - 1496 |
---|---|
Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Lausanne
Elsevier B.V
01.07.2007
Amsterdam Elsevier Science New York, NY |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The mechanism concerning mesopore formation remains unclear to date. In this letter, linear nuclei were pre-structured on purpose; anodizing with aqueous HF electrolyte, one-dimensional (1D) arrays of mesopores with depths up to 40
μm and diameters down to 20
nm (aspect ratios up to 1300) were fabricated in the dark. Significantly higher pore densities and markedly weaker branches occurred in comparison to randomly formed mesopores. Pore densities could increase with decreased current densities. Breakdown effects combined with current-burst-model were employed to interpret the underlying mechanism in detail; SCR (space charge region) effects were excluded as additional stabilizer of the 1D mesopore arrays. |
---|---|
ISSN: | 1388-2481 1873-1902 |
DOI: | 10.1016/j.elecom.2007.02.010 |