Effect of indium doping on motions of a -prismatic edge dislocations in wurtzite gallium nitride

The influences of indium doping on dynamics of a -prismatic edge dislocation along shuffle plane in wurtzite GaN have been investigated employing classical molecular dynamics (MD) simulations. The dependence of dislocation motion mode and dislocation velocity on indium doping concentration, temperat...

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Published inJournal of physics. Condensed matter Vol. 31; no. 31; p. 315701
Main Authors Chen, Cheng, Meng, Fanchao, Ou, Pengfei, Lan, Guoqiang, Li, Bing, Chen, Huicong, Qiu, Qiwen, Song, Jun
Format Journal Article
LanguageEnglish
Published England IOP Publishing 07.08.2019
Subjects
dislocation
doping
InGaN
mobility
molecular dynamics
InGaN
Molecular dynamics
doping
dislocation
mobility
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Summary:The influences of indium doping on dynamics of a -prismatic edge dislocation along shuffle plane in wurtzite GaN have been investigated employing classical molecular dynamics (MD) simulations. The dependence of dislocation motion mode and dislocation velocity on indium doping concentration, temperature, and applied shear stress was clarified. Moreover, the simulation results were further analyzed using elastic theory of dislocation and thermal activation theory of dislocation motion, showing excellent agreement with the simulation. Our findings help gain deep insights into modifying dynamic behaviors of TDs through the alloying doping and offer generic tools to the study of other wurtzite materials of promising application prospects, such as AlGaN and ZnO.
Bibliography:JPCM-113318.R3
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ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/ab1bf3