Morphology of homo-epitaxial vicinal (1 0 0) III–V surfaces

• Published in: Journal of crystal growth Vol. 200; no. 1; pp. 19 - 31
• Main Authors: Verschuren, C.A., Leys, M.R., Rongen, R.T.H., Vonk, H., Wolter, J.H.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.1999; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; III–V; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Morphology; Physics; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Vicinal; 68.55.−a; Morphology; III–V; 81.10.Aj; Model; Vicinal; 81.05.Ea; Homoepitaxy; Crystal defects; Inorganic compounds; Epitaxial layers; Semiconductor materials; Thick films; Binary compounds; Crystal growth from vapors; Step; Experimental study; Surface structure; Thin films; Surface reconstruction; Vicinal surface; Optical microscopy; Surface defect; Indium phosphides; Chemical beam epitaxy; Models; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(98)01412-2

Vicinal substrates are widely used to fabricate semiconductor devices. The different surface step types and their density have a strong influence on the surface structure. We have systematically studied this misorientation dependence on the morphology of (1 0 0)InP as a function of growth conditions in chemical beam epitaxy. On substrates containing no steps or only A-type steps we observe mirror-like surfaces, but many characteristic defects are always present. The defect density is successfully reduced by the introduction of B-type steps. When a sufficient density of only B steps is present, the surface is very smooth with almost no defects. Near any B “step up” edge, however, a ripple pattern is formed, which extends over tens of microns in the B step propagation direction. For substrates with mixed steps the ripple pattern is more pronounced and significant surface roughening occurs. Here, we present and discuss a general model for the morphology of (2×4) reconstructed vicinal (1 0 0) III–V surfaces. It gives a complete and quantitative description of these observations, including the dependence on growth conditions and thus provides a useful tool to study and optimize the growth process.