Depth profile analysis of surfaces produced by annealing ultra-thin films of Au deposited on Si(100)

• Published in: Surface science Vol. 367; no. 1; pp. 45 - 55
• Main Authors: Yang, G., Kim, J.H., Yang, S., Weiss, A.H.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 10.11.1996; Amsterdam Elsevier Science; New York, NY
• Subjects: Auger electron spectroscopy; Composition and phase identification; Composition; defects and impurities; Condensed matter: structure, mechanical and thermal properties; Depth profiling; Exact sciences and technology; Gold; Metal-semiconductor interfaces; Physics; Positron spectroscopy; Silicon; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Metal-semiconductor interfaces; Gold; Auger electron spectroscopy; Silicon; Depth profiling; Positron spectroscopy; Ultrathin films; Annealing; Transition elements; Surfaces; Experimental study; Depth profiles; AES
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/S0039-6028(96)00862-X

The surface formed when Au is deposited on a low-temperature (173 K) Si(100) substrate was studied as a function of the thickness of deposited Au utilizing positron-annihilation induced Auger electron spectroscopy (PAES). The concentration of Au as a function of depth has been the subject of some controversy for this system. Ion sputter depth profiles obtained using PAES indicate that the Au concentration is ∼ 100% to a depth of ∼ 1ML and then decreases continuously to ∼0% at depths of 13 and 28 Å for initial Au depositions of 5 and 10 Å, respectively. A comparison of PAES and EAES results indicate that PAES, because of its ability to selectively probe the topmost atomic layer, can be used to obtain significantly higher depth resolution in ion sputter depth profiles than is possible using EAES.