Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles

Amorphous carbon (t x a-C 1− x ) films were prepared by filtered cathodic arc deposition (FCAD). The films were deposited on p-type Si (111). The angle of beam incidence was varied from 0° to 75° with respect to the substrate normal. Micro-Raman spectroscopy, electron energy loss spectroscopy (EELS)...

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Bibliographic Details
Published inMaterials letters Vol. 41; no. 5; pp. 229 - 233
Main Authors Park, Minseo, Camphausen, S.M, Myers, A.F, Barletta, P.T, Sakhrani, V, Bergman, L, Nemanich, R.J, Cuomo, Jerome J
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.12.1999
Elsevier
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Summary:Amorphous carbon (t x a-C 1− x ) films were prepared by filtered cathodic arc deposition (FCAD). The films were deposited on p-type Si (111). The angle of beam incidence was varied from 0° to 75° with respect to the substrate normal. Micro-Raman spectroscopy, electron energy loss spectroscopy (EELS), and transmission electron microscopy (TEM) were carried out for sample analysis. It was found that the position of the G peak shifts to a higher wave number region as the angle of incidence increases. This means that the sp 2/sp 3 ratio increases with increasing angle. This conclusion is supported by EELS. The film deposited at an angle of 75° exhibits a columnar structure with alternating high and low carbon density regions.
ISSN:0167-577X
1873-4979
DOI:10.1016/S0167-577X(99)00135-4