Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles
Amorphous carbon (t x a-C 1− x ) films were prepared by filtered cathodic arc deposition (FCAD). The films were deposited on p-type Si (111). The angle of beam incidence was varied from 0° to 75° with respect to the substrate normal. Micro-Raman spectroscopy, electron energy loss spectroscopy (EELS)...
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Published in | Materials letters Vol. 41; no. 5; pp. 229 - 233 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.12.1999
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Amorphous carbon (t
x
a-C
1−
x
) films were prepared by filtered cathodic arc deposition (FCAD). The films were deposited on p-type Si (111). The angle of beam incidence was varied from 0° to 75° with respect to the substrate normal. Micro-Raman spectroscopy, electron energy loss spectroscopy (EELS), and transmission electron microscopy (TEM) were carried out for sample analysis. It was found that the position of the G peak shifts to a higher wave number region as the angle of incidence increases. This means that the sp
2/sp
3 ratio increases with increasing angle. This conclusion is supported by EELS. The film deposited at an angle of 75° exhibits a columnar structure with alternating high and low carbon density regions. |
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ISSN: | 0167-577X 1873-4979 |
DOI: | 10.1016/S0167-577X(99)00135-4 |