Mechanism of a– c oriented crystal growth of YBCO thin films by ion beam sputtering

In order to verify the critical factor of surface migration on a– c orientations of YBCO thin film growth, the surface roughness of MgO substrates was controlled by plasma cleaning. Then the films were deposited on these substrates at 600°C by ion beam sputtering. The a-phase ratio increases with in...

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Published inJournal of crystal growth Vol. 229; no. 1; pp. 321 - 324
Main Authors Endo, T, Itoh, KI, Hashizume, A, Kohmoto, H, Takahashi, E, Morimoto, D, Srinivasu, V.V, Masui, T, Niwano, K, Nakanishi, H
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.07.2001
Elsevier
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Summary:In order to verify the critical factor of surface migration on a– c orientations of YBCO thin film growth, the surface roughness of MgO substrates was controlled by plasma cleaning. Then the films were deposited on these substrates at 600°C by ion beam sputtering. The a-phase ratio increases with increasing surface roughness. This strongly supports the surface migration mechanism because the migration is retarded by surface barriers, and then the a-phase growth is enhanced.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)01173-3