Mechanism of a– c oriented crystal growth of YBCO thin films by ion beam sputtering

• Published in: Journal of crystal growth Vol. 229; no. 1; pp. 321 - 324
• Main Authors: Endo, T, Itoh, KI, Hashizume, A, Kohmoto, H, Takahashi, E, Morimoto, D, Srinivasu, V.V, Masui, T, Niwano, K, Nakanishi, H
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2001; Elsevier
• Subjects: A1. Nucleation; A1. Surface processes; A3. Migration enhanced epitaxy; A3. Physical vapor deposition processes; B1. Perovskites; B2. Oxide superconducting materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; High-tc films; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Superconducting films and low-dimensional structures; Superconductivity; B1. Perovskites; A3. Physical vapor deposition processes; A1. Surface processes; B2. Oxide superconducting materials; A1. Nucleation; A3. Migration enhanced epitaxy; Surface cleaning; Inorganic compounds; Crystal orientation; Ion beam sputtering; Transition element compounds; Roughness; Surfaces; Crystal growth from vapors; Surface diffusion; Experimental study; Preferred orientation; Substrates; Thin films; Barium oxides; High-Tc superconductors; Diffusion; Copper oxides; Yttrium oxides
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)01173-3

In order to verify the critical factor of surface migration on a– c orientations of YBCO thin film growth, the surface roughness of MgO substrates was controlled by plasma cleaning. Then the films were deposited on these substrates at 600°C by ion beam sputtering. The a-phase ratio increases with increasing surface roughness. This strongly supports the surface migration mechanism because the migration is retarded by surface barriers, and then the a-phase growth is enhanced.