Preparation of polythiophene thin films by UV laser-assisted deposition of 2,5-dichlorothiophene with a 248 nm excimer laser beam
Polythiophene thin films are prepared by UV laser-assisted deposition (UV-LAD) of 2,5-dichlorothiophene (2,5-DCT) with a 248 nm (KrF) beam at several fluence values. Surface morphologies of the films dependent strongly on laser fluence and deposition rate of the reactant. In the optimized conditions...
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Published in | Journal of photochemistry and photobiology. A, Chemistry. Vol. 116; no. 3; pp. 245 - 249 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Lausanne
Elsevier B.V
30.07.1998
Elsevier Science |
Subjects | |
Online Access | Get full text |
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Summary: | Polythiophene thin films are prepared by UV laser-assisted deposition (UV-LAD) of 2,5-dichlorothiophene (2,5-DCT) with a 248 nm (KrF) beam at several fluence values. Surface morphologies of the films dependent strongly on laser fluence and deposition rate of the reactant. In the optimized conditions, mesh-like structures consisting of numerous fibers were observed. Electric conductivity of the film prepared by UV-LAD at 10 mJ cm
−2 pulse
−1 increased from less than 10
−7 S cm
−1 up to 10
−3 S cm
−1 on iodine doping. FT-IR, photoelectron spectroscopy (XPS) and ultra violet—visible (UV—vis) spectroscopy measurements show that, although sulfur atoms are eliminated to some extent, polymerization occurs basically at 2 and 5 positions of 2,5-DCT by effective elimination of halogen atoms to form polythiophene with various π-conjugation lengths. The film contained both soluble and insoluble components in tetrahydrofuran (THF) and acetonitrile (AN) solvents. Components with π-conjugation length corresponding to those of an oligothiophene with 3 ± 1 thiophene units are dominant for soluble components. Optical band gap is estimated to be 2.93 eV for insoluble components in the film. |
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ISSN: | 1010-6030 1873-2666 |
DOI: | 10.1016/S1010-6030(98)00311-6 |