Temperature Influence on GaN HEMT Equivalent Circuit

The purpose of this letter is to present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the exploration and advancement of this technology for high-power and high-temperature applications, the major intrinsic...

Full description

Saved in:
Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 26; no. 10; pp. 813 - 815
Main Authors Crupi, Giovanni, Raffo, Antonio, Avolio, Gustavo, Schreurs, Dominique M. M.-P, Vannini, Giorgio, Caddemi, Alina
Format Journal Article
LanguageEnglish
Published IEEE 01.10.2016
Subjects
Capacitance
Equivalent circuit
Equivalent circuits
Gallium nitride
gallium nitride (GaN)
HEMTs
high electron-mobility transistor (HEMT)
Radio frequency
temperature
Temperature dependence
Temperature measurement
Online AccessGet full text

Cover

More Information
Summary:The purpose of this letter is to present an experimental analysis of the temperature effects on the small-signal equivalent circuit of a GaN HEMT. With the aim of contributing to the exploration and advancement of this technology for high-power and high-temperature applications, the major intrinsic RF figures of merit together with the positive derivative of the real parts of the impedance parameters versus frequency are deeply investigated versus ambient temperature.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2016.2601487