Metalorganic chemical vapour deposition (MOCVD) of zirconia and lead zirconate titanate using a novel zirconium precursor

• Published in: Journal of the European Ceramic Society Vol. 19; no. 6; pp. 1431 - 1434
• Main Authors: Jones, Anthony C, Leedham, Timothy J, Wright, Peter J, Williams, Dennis J, Crosbie, Michael J, Davies, Hywel O, Fleeting, Kirsty A, O’Brien, Paul
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 01.01.1999; Elsevier
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOCVD; Niobates, titanates, tantalates, pzt ceramics, etc; Physics; PZT; ZrO 2; ZrO 2; films; PZT; MOCVD; Inorganic compounds; Lead titanates; Organic ligand; Binary compounds; Zinc complexes; Crystal growth from vapors; Diketone; Experimental study; Precursor; Lead zirconates; Characterization; Thin films; Thermal properties; Alkoxy complex; Ferroelectric materials; Zirconium oxides; Chemical composition; Kinetics; Fluid injection; Quaternary compounds; Uniformity
• ISSN: 0955-2219; 1873-619X
• DOI: 10.1016/S0955-2219(98)00456-7

The novel mixed ligand precursor Zr 2(OPr i) 6(thd) 2 (thd=2,2,6,6,-tetramethyl-3,5-heptanedionate) has been used in the deposition of ZrO 2 and Pb(Zr,Ti)O 3 thin films by liquid injection metalorganic chemical vapour deposition (MOCVD). Oxide growth was observed over a wide temperature range, from 250°C to at least 600°C. Maximum growth rates of ZrO 2 occurred between 350°C and 550°C, significantly lower than the optimum deposition temperature from the conventional Zr(thd) 4 precursor, and in a similar temperature range to optimised oxide growth from Pb(thd) 2. Consequently, the use of Zr 2(OPr i) 6(thd) 2 in combination with Pb(thd) 2 and Ti(OPr i) 2(thd) 2 leads to the deposition of Pb(Zr,Ti)O 3 with improved compositional uniformity.