Quantum beat spectroscopy on excitons in GaN

We present four wave mixing experiments on excitons in GaN. The four wave mixing transients exhibit strong modulations yielding a splitting of the A- and the B-exciton of 7.98 meV. In addition, we obtain a biexciton binding energy for A-excitons of 5.7 meV.

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Bibliographic Details
Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 50; no. 1; pp. 205 - 207
Main Authors Zimmermann, R, Hofmann, M.R, Euteneuer, A, Möbius, J, Weber, D, Rühle, W.W, Göbel, E.O, Meyer, B.K, Amano, H, Akasaki, I
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 18.12.1997
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Excitons
Excitons and related phenomena
Fundamental areas of phenomenology (including applications)
GaN
Intrinsic properties of excitons; optical absorption spectra
Nonlinear optics
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Optics
Phase conjugation, optical mixing, and photorefractive effect
Phase conjugation, optical mixing; photorefractive and kerr effects
Physics
Quantum beat spectroscopy
GaN
Excitons
Quantum beat spectroscopy
Inorganic compounds
Epitaxial layers
Semiconductor materials
Four-wave mixing
Gallium nitrides
Quantum beats
Binary compounds
Experimental study
Transients
Biexcitons
Binding energy
Modulation
Energy-level splitting
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Summary:We present four wave mixing experiments on excitons in GaN. The four wave mixing transients exhibit strong modulations yielding a splitting of the A- and the B-exciton of 7.98 meV. In addition, we obtain a biexciton binding energy for A-excitons of 5.7 meV.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(97)00182-7