Thermal stability of NbN films deposited on GaAs substrates

• Published in: Vacuum Vol. 50; no. 1; pp. 45 - 48
• Main Authors: Hotový, I, Huran, J, Búc, D, Srnánek, R
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 01.05.1998; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physical properties of thin films, nonelectronic; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thermal stability; thermal effects; RBS; Inorganic compounds; Semiconductor materials; Schottky barriers; Transition element compounds; Binary compounds; Crystal growth from vapors; Experimental study; Thermal stability; AES; Thin films; Magnetrons; Reactive sputtering; Niobium nitrides
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/S0042-207X(98)00012-8

Niobium nitride films were prepared on unheated GaAs substrates by dc reactive magnetron sputtering from a niobium metal target in an Ar + N 2 mixed atmosphere. The nitrogen content in the gas mixture was varied from 2–20%, and the structural and electrical characteristics of the deposited thin NbN Schottky contacts to GaAs studied under high-temperature annealing (with annealing temperatures ranging from 850–950 °C). Using several characterisation methods, Auger analysis, Rutherford backscattering spectrometry analysis, and Schottky barrier measurement, it was found that the NbN/GaAs interface remained stable after rapid thermal annealing at 900 °C for 10 s for NbN films prepared with 2 and 5% N 2 in the gas mixture.