A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna

Many emerging applications in the terahertz (THz) frequency range demand highly sensitive, broadband detectors for room-temperature operation. Field-effect transistors with integrated antennas for THz detection (TeraFETs) have proven to meet these requirements, at the same time offering great potent...

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Bibliographic Details
Published inIEEE transactions on terahertz science and technology Vol. 9; no. 4; pp. 430 - 444
Main Authors Bauer, Maris, Ramer, Adam, Chevtchenko, Serguei A., Osipov, Konstantin Y., Cibiraite, Dovile, Pralgauskaite, Sandra, Ikamas, Kestutis, Lisauskas, Alvydas, Heinrich, Wolfgang, Krozer, Viktor, Roskos, Hartmut G.
Format Journal Article
LanguageEnglish
Published Piscataway IEEE 01.07.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Aluminum gallium nitride
Aluminum gallium nitrides
Antennas
Broadband
Broadband antenna
Broadband antennas
Broadband communication
Computer simulation
Detectors
Field effect transistors
Frequency ranges
Gallium nitrides
GaN HEMT
Integrated circuit modeling
Logic gates
MMIC (circuits)
Parasitic elements (antennas)
plasmonic mixing
Semiconductor devices
Sensors
Signal to noise ratio
Silicon substrates
terahertz (THz) detectors
Wide band gap semiconductors
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Summary:Many emerging applications in the terahertz (THz) frequency range demand highly sensitive, broadband detectors for room-temperature operation. Field-effect transistors with integrated antennas for THz detection (TeraFETs) have proven to meet these requirements, at the same time offering great potential for scalability, high-speed operation, and functional integrability.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:2156-342X
2156-3446
DOI:10.1109/TTHZ.2019.2917782